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this is information on a product in full production. october 2013 docid023785 rev 3 1/18 18 STB36NM60Nd, stw36nm60nd automotive-grade n-channel 600 v, 0.097 ? typ., 29 a fdmesh? ii power mosfets (with fast diode) in d 2 pak and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? 100% avalanche tested ? low input capacitance and gate charge ? low gate input resistance ? extremely high dv/dt and avalanche capabilities applications ? automotive switching applications description these fdmesh? ii power mosfets with intrinsic fast-recovery body diode are produced using the second generation of mdmesh? technology. utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. they are ideal for bridge topologies and zvs phase-shift converters. 1 2 3 to-247 1 3 tab d 2 pak !-v $4!" ' 3 order codes v dss @t j max. r ds(on) max. i d STB36NM60Nd 650 v 0.110 29 a stw36nm60nd table 1. device summary order codes marking package packaging STB36NM60Nd 36nm60nd d 2 pak tape and reel stw36nm60nd 36nm60nd to-247 tube www.st.com
contents STB36NM60Nd, stw36nm60nd 2/18 docid023785 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid023785 rev 3 3/18 STB36NM60Nd, stw36nm60nd electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 600 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 29 a i d drain current (continuous) at t c = 100 c 18 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 116 a p tot total dissipation at t c = 25 c 190 w dv/dt (2) 2. i sd 29 a, di/dt 600 a/s, v dd = 80% v (br)dss ,v dspeak < v (br)dss peak diode recovery voltage slope 40 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 table 3. thermal data symbol parameter value unit d 2 pak to-247 r thj-case thermal resistance junction-case max 0.66 c/w r thj-amb thermal resistance junction-ambient max 50 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch2, 2 oz cu. thermal resistance junction-pcb max 30 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 7a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 110 mj
electrical characteristics STB36NM60Nd, stw36nm60nd 4/18 docid023785 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 14.5 a 0.097 0.110 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 -2785- pf c oss output capacitance - 168 - pf c rss reverse transfer capacitance -5-pf c oss eq. (1) 1. c oss eq . is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 438 - pf t d(on) turn-on delay time v dd =300 v, i d = 14.5 a r g =4.7 , v gs = 10 v (see figure 16 and 21 ) -30- ns t r rise time - 53.4 - ns t d(off) turn-off delay time - 111 - ns t f fall time - 61.8 - ns q g total gate charge v dd = 480 v, i d = 29 a, v gs = 10 v, (see figure 17 ) -80.4- nc q gs gate-source charge - 16 - nc q gd gate-drain charge - 41.4 - nc r g gate input resistance f=1 mhz , open drain - 2.87 -
docid023785 rev 3 5/18 STB36NM60Nd, stw36nm60nd electrical characteristics table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 29 116 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 29 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 29 a, v dd = 60 v di/dt=100 a/s (see figure 18 ) -175 ns q rr reverse recovery charge - 1.4 c i rrm reverse recovery current - 16 a t rr reverse recovery time i sd = 29 a,v dd = 60 v di/dt=100 a/s, t j = 150 c (see figure 18 ) -255 ns q rr reverse recovery charge - 2.6 c i rrm reverse recovery current - 20 a
electrical characteristics STB36NM60Nd, stw36nm60nd 6/18 docid023785 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak figure 3. thermal impedance for d 2 pa k figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 figure 6. output characteristics figure 7. transfer characteristics i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am09017v1 i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am09019v1 i d 60 40 20 0 0 10 v d s (v) 20 (a) 5 15 25 8 0 5v 6v 7v v g s =10v 3 0 10 50 70 3 0 am0 8 229v1 i d 60 40 20 0 0 4 v g s (v) 8 (a) 2 6 10 8 0 v d s =20v 10 3 0 50 70 am00 88 9v1
docid023785 rev 3 7/18 STB36NM60Nd, stw36nm60nd electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =4 8 0v i d =29a 50 12 3 00 200 100 0 400 500 v d s 60 70 8 0 90 v d s (v) am0 8 2 3 1v1 r d s (on) 0.096 0.094 0.092 0.090 0 4 i d (a) ( ) 8 12 0.09 8 0.100 0.102 v g s =10v 16 20 24 2 8 am0 8 2 3 2v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am0 8 2 33 v1 e o ss 6 4 2 0 0 100 v d s (v) ( j) 400 8 200 3 00 10 12 500 600 14 16 am0 8 2 3 4v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am0 8 2 3 5v1 r d s (on) 1.7 1.5 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1. 3 1.1 1.9 2.1 am0 8 2 3 6v1 i d =14.5 a v g s =10 v
electrical characteristics STB36NM60Nd, stw36nm60nd 8/18 docid023785 rev 3 figure 14. normalized v ds vs temperature figure 15. source-drain diode forward vs temperature v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1 96'>9@ ,6'>$@ 4 j ?# 4 j ?# 4 j ?# !-v
docid023785 rev 3 9/18 STB36NM60Nd, stw36nm60nd test circuits 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STB36NM60Nd, stw36nm60nd 10/18 docid023785 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid023785 rev 3 11/18 STB36NM60Nd, stw36nm60nd package mechanical data table 8. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB36NM60Nd, stw36nm60nd 12/18 docid023785 rev 3 figure 22. d2pak (to-263) drawing figure 23. d2pak footprint (a) a. all dimensions are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
docid023785 rev 3 13/18 STB36NM60Nd, stw36nm60nd package mechanical data table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data STB36NM60Nd, stw36nm60nd 14/18 docid023785 rev 3 figure 24. to-247 drawing 0075 3 25_g
docid023785 rev 3 15/18 STB36NM60Nd, stw36nm60nd packaging mechanical data 5 packaging mechanical data table 10. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t0.25 0.35 w23.7 24.3
packaging mechanical data STB36NM60Nd, stw36nm60nd 16/18 docid023785 rev 3 figure 25. tape figure 26. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
docid023785 rev 3 17/18 STB36NM60Nd, stw36nm60nd revision history 6 revision history table 11. document revision history date revision changes 24-oct-2012 1 initial release. 01-jul-2013 2 ? updated figure 1: internal schematic diagram . ? added section 2.1: electrical characteristics (curves) . 02-oct-2013 3 ? modified: e as in table 4 , c oss eq. typical value in table 6 , figure 13 ? minor text changes
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